🍪 Nice progress from Imec on single-print high-NA EUV, reducing processing steps compared to multi-patterning, lowering fabrication costs and environmental impact and improving yield for < 2nm processes.
> Imec demonstrates line structures at 20nm pitch with 13nm tip-to-tip dimensions relevant for damascene metallization, as well as 20nm and 18nm pitch ruthenium lines in a direct metal etch (DME) process – both obtained with single-print High NA EUV lithography.
https://www.imec-int.com/en/press/imec-achieves-new-milestones-single-patterning-high-na-euv-lithography-both-damascene-and